发明名称 |
High Voltage Resistor With Pin Diode Isolation |
摘要 |
Provided is a high voltage semiconductor device that includes a PIN diode structure formed in a substrate. The PIN diode includes an intrinsic region located between a first doped well and a second doped well. The first and second doped wells have opposite doping polarities and greater doping concentration levels than the intrinsic region. The semiconductor device includes an insulating structure formed over a portion of the first doped well. The semiconductor device includes an elongate resistor device formed over the insulating structure. The resistor device has first and second portions disposed at opposite ends of the resistor device, respectively. The semiconductor device includes an interconnect structure formed over the resistor device. The interconnect structure includes: a first contact that is electrically coupled to the first doped well and a second contact that is electrically coupled to a third portion of the resistor located between the first and second portions.
|
申请公布号 |
US2012319240(A1) |
申请公布日期 |
2012.12.20 |
申请号 |
US201113160030 |
申请日期 |
2011.06.14 |
申请人 |
SU RU-YI;YANG FU-CHIH;TSAI CHUN LIN;CHENG CHIH-CHANG;LIU RUEY-HSIN;TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. |
发明人 |
SU RU-YI;YANG FU-CHIH;TSAI CHUN LIN;CHENG CHIH-CHANG;LIU RUEY-HSIN |
分类号 |
H01L29/8605;H01L21/20 |
主分类号 |
H01L29/8605 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|