发明名称 PINHOLE INSPECTION METHOD OF INSULATOR LAYER
摘要 A pinhole inspection method of an insulator layer, wherein the pinhole inspection method comprises steps as following: A dry etching process is firstly performed to remove a contiguous layer adjacent to the insulator layer. Subsequently an etching endpoint is determined and the dry etching process is then stopped in accordance with a second electron energy variation triggered by the dry etching process. Afterward, a cross-sectional morphology or topography of the insulator layer is inspected.
申请公布号 US2012322170(A1) 申请公布日期 2012.12.20
申请号 US201113159763 申请日期 2011.06.14
申请人 CHOU PO-FU;TSAI CHUN-MING;UNITED MICROELECTRONICS CORP. 发明人 CHOU PO-FU;TSAI CHUN-MING
分类号 H01L21/66 主分类号 H01L21/66
代理机构 代理人
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