发明名称 |
METHOD FOR MANUFACTURING SEMICONDUCTOR LIGHT EMITTING DEVICE AND SEMICONDUCTOR LIGHT EMITTING DEVICE WAFER |
摘要 |
According to one embodiment, a method is disclosed for manufacturing a semiconductor light emitting device. The method can include forming a nitride semiconductor layer including a light emitting layer on a first substrate having an unevenness, bonding the nitride layer to a second substrate, and separating the first substrate from the nitride layer by irradiating the nitride layer with light. The forming the nitride layer includes leaving a cavity in a space inside a depression of the unevenness while forming a thin film on the depression. The film includes a same material as part of the nitride layer. The separating includes causing the film to absorb part of the light so that intensity of the light applied to a portion of the nitride layer facing the depression is made lower than intensity of the light applied to a portion facing a protrusion of the unevenness.
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申请公布号 |
US2012319161(A1) |
申请公布日期 |
2012.12.20 |
申请号 |
US201213405634 |
申请日期 |
2012.02.27 |
申请人 |
GOTODA TORU;OKA TOSHIYUKI;NUNOUE SHINYA;ZAIMA KOTARO;ONO HIROSHI;NAGO HAJIME;KABUSHIKI KAISHA TOSHIBA |
发明人 |
GOTODA TORU;OKA TOSHIYUKI;NUNOUE SHINYA;ZAIMA KOTARO;ONO HIROSHI;NAGO HAJIME |
分类号 |
H01L33/02 |
主分类号 |
H01L33/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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