| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method for driving a semiconductor device. <P>SOLUTION: In a semiconductor device which includes a bit line, a selection line, a selection transistor, m lines (m is a natural number of 2 or more) of write-in word lines, m lines of read-out word lines, a source line, and one to m of memory cells, the memory cell includes a second transistor for holding an electric charge accumulated in a first transistor and a capacitor element, and the second transistor has a channel formed of an oxide semiconductor layer. A method for driving a semiconductor device having the structure includes making the first transistor into a conductive state, setting a first source terminal or a first drain terminal to a fixed potential, and thereby stably writing in a potential in the capacitor element, when writing the potential in a memory cell. <P>COPYRIGHT: (C)2013,JPO&INPIT |
