| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method for forming on a silicon surface a surface passivation layer comprising an Al<SB POS="POST">2</SB>O<SB POS="POST">3</SB>layer, by which good surface passivation quality of the surface passivation layer is maintained while blister formation is avoided even at high temperature. <P>SOLUTION: A method for forming a surface passivation layer on a surface of a crystalline silicon substrate comprises the steps of: depositing on the surface an Al<SB POS="POST">2</SB>O<SB POS="POST">3</SB>layer having a thickness of 15 nm or less; performing an outgassing process at a temperature in the range between 500°C and 900°C, after the deposition of the Al<SB POS="POST">2</SB>O<SB POS="POST">3</SB>layer on the surface; and, after the outgassing process, depositing at least one additional dielectric layer such as a silicon nitride layer and/or a silicon oxide layer on the Al<SB POS="POST">2</SB>O<SB POS="POST">3</SB>layer. <P>COPYRIGHT: (C)2013,JPO&INPIT |
