发明名称 IN-SITU DEPOSITED MASK LAYER FOR DEVICE SINGULATION BY LASER SCRIBING AND PLASMA ETCH
摘要 Methods of dicing substrates by both laser scribing and plasma etching. A method includes forming an in-situ mask with a plasma etch chamber by accumulating a thickness of plasma deposited polymer to protect IC bump surfaces from a subsequent plasma etch. Second mask materials, such as a water soluble mask material may be utilized along with the plasma deposited polymer. At least some portion of the mask is patterned with a femtosecond laser scribing process to provide a patterned mask with trenches. The patterning exposing regions of the substrate between the ICs in which the substrate is plasma etched to singulate the IC and the water soluble material layer washed off.
申请公布号 US2012322234(A1) 申请公布日期 2012.12.20
申请号 US201113160973 申请日期 2011.06.15
申请人 YALAMANCHILI MADHAVA RAO;LEI WEI-SHENG;EATON BRAD;SINGH SARAVJEET;KUMAR AJAY;WU BANQIU;APPLIED MATERIALS, INC. 发明人 YALAMANCHILI MADHAVA RAO;LEI WEI-SHENG;EATON BRAD;SINGH SARAVJEET;KUMAR AJAY;WU BANQIU
分类号 H01L21/82;C23F1/08 主分类号 H01L21/82
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