| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device that operates stably. <P>SOLUTION: A semiconductor device comprises: a well 13 of a first conductivity type that is formed in a substrate 11; a gate electrode 18 that is disposed above the well 13 via a gate insulating film 17; a source region 15 and a drain region 16 of a second conductivity type that are disposed facing each other in the substrate 11 with interposed the gate electrode 18 therebetween; a well tap 19 that is disposed adjacent to the source region 15 in the substrate 11 and is electrically connected to the well 13; and a pocket region 20 that contacts the well 13 and the well tap 19, has a higher impurity concentration than the well 13, and has the first conductivity type. <P>COPYRIGHT: (C)2013,JPO&INPIT |
