METHOD OF FORMING RESIST PATTERN

摘要

PURPOSE: A method for forming a resist pattern is provided to miniaturize a pattern dimension by pulling a sidewall of a pattern part of a resist film toward a gap between patterns with thermally shrunk coating film. CONSTITUTION: A resist film is formed on a supporter using a resist composition. The resist film is exposed. A resist pattern is formed by patterning the resist film with negative development which uses a developer containing an organic solvent. A coating film is formed by coating a coating film material on a resist pattern. A gap between resist patterns becomes narrower with thermal contraction of the coating film by performing a thermal process at temperatures lower than a softening point of the resist pattern. The coating film is removed.