| 摘要 |
<p>Disclosed is a device for improving the temperature gradient when casting a quasi-monocrystalline crystal silicon ingot, said device being disposed within a GT ingot furnace or within an ingot furnace having a four-sides-and-top heater and having, either outside of the crucible protection panel or outside the crucible, heat retention layers disposed on four sides. The heat retention layers may be fixed on the crucible protection panel, or between the crucible and the protection panel, or on an insulating cage, or on the heater, or on a heat conducting member; the height of the heat retention layer is 1 to 650 mm; the thickness of the heat retention layer is 0.01 to 100 mm. The device improves the isothermal curve of the chemical materials and of the growth; thus ensuring that the seed crystal solidifies at the bottom of the furnace and does not melt or float. In addition, the device reduces the height of seed crystals and reduces costs.</p> |
