| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a plasma CVD device that inhibits the dispersion of a gas partial-pressure ratio due to a gas decomposition in a plasma and realizing uniform film formation, in a partial gas suction-exhaust system. <P>SOLUTION: In the plasma CVD device, the device has a discharge electrode 12 and a second electrode, holding a substrate 16 so as to be opposed to the discharging electrode 12 and an electrode surface 32 held by a gas feed passage 18 for feeding a material gas, and a gas exhaust passage 20 for exhausting the material gas is fitted at the front end of the discharging electrode 12 opposite to the substrate 16. In the plasma CVD device, the material gas, fed between the electrode surface 32 and the substrate 16, is turned into a plasma and a photoelectric conversion layer is chemically vapor-deposited on the substrate 16 by the discharge electrode 12 and the second electrode. In such a plasma CVD device, a gap length L2 on the gas exhaust passage 20 side is formed to a size larger than that L1 on the gas feed passage 18 side. <P>COPYRIGHT: (C)2008,JPO&INPIT</p> |
