| 摘要 |
A thin plate of synthetic single crystal diamond material having a thickness in a range 100 nm to 50 µm, a concentration of negatively charged nitrogen vacancy quantum (NV-) spin defects greater than 0.1 ppb (parts-per billion) and a concentration of point defects other than the quantum spin defects of below 200 ppm (parts-per-million) is used for spintronic quantum devices and sensors. At least one major face of the thin plate of synthetic single crystal diamond material is coated with a surface termination species (16O) having zero nuclear spin and/or zero electron spin. The diamond layer is provided by thinning the substrate by implantation and separation, etching, polishing or mechanical grinding.
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