| 摘要 |
A semiconductor memory device comprises memory blocks having a plurality of memory cells coupled to a plurality of bit lines, a first latch group coupled to a sense node and configured to store data to be programmed into memory cells, where the memory cells are coupled to the bit lines and the sense node is coupled to at least one of the bit lines, a second latch group coupled to the sense node and configured to receive data of the first latch group, and a sense node voltage control circuit configured to control a voltage of the sense node according to data stored in the first latch group. |
