| 摘要 |
Provided is a semiconductor device in which a first lead (11) is soldered to the bottom electrode (23) of a MOS-FET (21) using first solder (51), the top electrode (22) of the MOS-FET is soldered to an internal lead (31) using second solder (52), the internal lead is soldered to a projection (61) of the second lead using third solder (53), and the first lead, second lead, MOS-FET, and internal lead are molded integrally using sealing resin (41), wherein support members (54, 55) are positioned inside the first solder and inside the second solder, and the positions of the internal lead and the MOS-FET are stabilized by way of self-alignment. |
