| 摘要 |
A method of improved anti-corrosion properties of thin films is provided that includes using an argon-hydrogen (Ar-H2) plasma to pre-treat a substrate, and using an atomic layer deposition (ALD) device to deposit a thin film on the substrate, where the ALD includes a thermal ALD or a plasma-enhanced ALD, and where the ALD includes a metal precursor and an oxygen source. The substrate can include a metal or metal alloy, and the thin film can include metal oxides, metal nitrides, metal carbides, or pure metals. The argon-hydrogen plasma pre-treatment can include a continuous or pulsed plasma, with exposure to ambient or no exposure to the ambient, and include either additional treatments or no additional treatments between the plasma pre-treatment and the ALD. Further, the thin film includes a thickness in the range of 0.1 nm to 10,000 nm.
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