| 摘要 |
A method of selective deposition on silicon substrates having regions of bare silicon and regions of oxide formed thereon. The method includes placing the substrate on a wafer support inside a processing chamber, introducing a carbon-containing gas into the reactor, applying a bias to the substrate, generating a plasma from the carbon-containing gas, implanting carbon ions into the regions of oxide on the substrate by a plasma doping process, and depositing a carbon-containing film on the bare silicon regions. |
