| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a highly reliable storage element which inhibits variation in thermal stability and a write current (inversion current) to stably operate. <P>SOLUTION: A storage element comprises: a storage layer holding information by an in-plane magnetization state of a magnetic substance; a magnetization fixed layer having magnetization which serves as reference for information stored in the storage layer; and an intermediate layer of a nonmagnetic substance provided between the storage layer and the magnetization fixed layer. The storage element stores information by inverting magnetization of the storage layer by utilizing spin torque magnetization reversal occurring in association with a current flowing in a lamination direction of a layer structure having the storage layer, the intermediate layer and the magnetization fixed layer, and an anisotropy field of the memory layer in a hard axis direction is smaller than an anisotropy field in a vertical direction. <P>COPYRIGHT: (C)2013,JPO&INPIT |
