| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method of manufacturing a microfabricated semiconductor device having gate electrodes which are mutually separated on the opposing side faces of a trench. <P>SOLUTION: In steps of forming a trench 4 and a gate insulating film 6, the trench 4 and gate insulating film 6 are formed by adjusting, when a part of the trench 4 that contacts a second conductivity type layer 3 is assumed to be an intermediate part, a spacing of the gate insulating film 6 which is formed on the opposing side faces of the trench 4 so that a spacing W1 at a part that is formed at the opening of the trench 4 is narrower than a spacing W2 at a part that is formed at the intermediate part of the trench 4. In a step of forming a conductive film 7a, the conductive film 7a is formed while an air gap 14 surrounded by the conductive film 7a is formed in the trench 4. Then, in a step of forming a gate electrode 7, the gate electrode 7 is formed by anisotropically etching the conductive film 7a and removing the conductive film 7a formed on the bottom of the trench 4 through the air gap 14. <P>COPYRIGHT: (C)2013,JPO&INPIT |
