| 发明名称 |
NON-VOLATILE SEMICONDUCTOR STORAGE DEVICE AND METHOD OF MANUFACTURING THE SAME |
| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a non-volatile semiconductor storage device and a method of manufacturing the same capable of improving insulating characteristics of a memory cell. <P>SOLUTION: A non-volatile semiconductor storage device according to an embodiment comprises a semiconductor region. An interface region containing a metallic element is provided on a surface of the semiconductor region. A tunnel insulating film is provided on a surface of the interface region. A charge accumulation insulating film is provided on a surface of the tunnel insulating film. A block insulating film is provided on a surface of the charge accumulation insulating film. A control gate electrode is provided on a surface of the block insulating film. <P>COPYRIGHT: (C)2013,JPO&INPIT |
| 申请公布号 |
JP2012248691(A) |
申请公布日期 |
2012.12.13 |
| 申请号 |
JP20110119467 |
申请日期 |
2011.05.27 |
| 申请人 |
TOSHIBA CORP |
发明人 |
TORAYA KENICHIRO;TANAKA MASAYUKI;MATSUO KAZUNORI |
| 分类号 |
H01L21/336;H01L21/8247;H01L27/115;H01L29/788;H01L29/792 |
主分类号 |
H01L21/336 |
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