发明名称 INTERCONNECTION BARRIER MATERIAL DEVICE AND METHOD
摘要 Interconnects containing ruthenium and methods of forming can include utilization of a sacrificial protective material. Planarization or other material removal operations can be performed on a substrate having a recess, the recess containing a ruthenium containing material along with the sacrificial protective material. The protective material is later removed, and a conductor can be filled in the remaining recess.
申请公布号 US2012315754(A1) 申请公布日期 2012.12.13
申请号 US201113155908 申请日期 2011.06.08
申请人 ZHU XIAOYUN;COLLINS DALE W.;LINDGREN JOSEPH;JINDAL ANURAG;MICRON TECHNOLOGY, INC. 发明人 ZHU XIAOYUN;COLLINS DALE W.;LINDGREN JOSEPH;JINDAL ANURAG
分类号 H01L21/768 主分类号 H01L21/768
代理机构 代理人
主权项
地址