| 摘要 |
<P>PROBLEM TO BE SOLVED: To maintain a high overlay accuracy of a pattern. <P>SOLUTION: In EGA optimization simulation, the alignment processing parameters are optimized while taking account of the linewidth variation of a pattern formed, using results of EGA simulation performed using measurement results of first time wafer alignment(EGA measurement), and results of EGA simulation performed using measurement results of second time wafer alignment(EGA measurement) (steps S38, S39, S42, S43). Consequently, a high overlay accuracy of a pattern can be achieved even when a pattern is formed on a wafer by utilizing a double patterning method. <P>COPYRIGHT: (C)2013,JPO&INPIT |
