| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a switching device capable of reducing on-resistance of a switching element. <P>SOLUTION: A switching element 10 has an electric field application electrode 14 joined with a semiconductor substrate 104 being interposed by an insulator film 15. An electric field control part 22 of a drive circuit 20 is connected to the electric field application electrode 14 and a source electrode 13 of the switching element 10 to apply a bias voltage Ve across the electric field application electrode 14 and the source electrode 13. The electric field control part 22 applies an electric field to a heterojunction interface of the semiconductor substrate 104 from the electric field application electrode 14 by applying a bias voltage Ve exceeding a threshold value to the switching element 10. That is, the electric field applied from the electric field application electrode 14 to the semiconductor substrate 104 with the switching element 10 in the on-state increases the electron concentration in the channel region due to a field effect and acts to reduce the on-resistance of the switching element 10. <P>COPYRIGHT: (C)2013,JPO&INPIT |
