| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a switching device capable of reducing on-resistance of a switching element. <P>SOLUTION: A switching element 10 has a hole injection part 140 that includes an injection electrode 14 directly joined to a semiconductor substrate 104. An injection drive section 22 of a drive circuit 20 is connected to the injection electrode 14 and a source electrode 13 of the switching element 10 to apply an injection voltage Vin across the injection electrode 14 and the source electrode 13. The injection drive section 22 injects holes into a heterojunction interface of the semiconductor substrate 104 from the hole injection part 140 by applying the injection voltage Vin exceeding a threshold value to the switching element 10. Since the injected holes attract electrons of same amount to the heterojunction interface, the density of the secondary electron gas in a channel region is increased, and thus the on-resistance of the switching element 10 is reduced. <P>COPYRIGHT: (C)2013,JPO&INPIT |
