| 摘要 |
A method of manufacturing a semiconductor device, comprising, forming a first gate electrode in a first region of a semiconductor substrate and forming a second gate electrode in a second region of the semiconductor substrate, forming a first sidewall along a lateral wall of the first gate electrode and forming a second sidewall along a lateral wall of the second gate electrode, forming an oxide film to cover the semiconductor substrate, the first gate electrode, the second gate electrode, the first sidewall and the second sidewall, forming a resist above the oxide film to cover the first region, removing the oxide film in the second region by etching the oxide film with the resist serving as a mask, removing the resist, and executing a plasma process by using a gas containing chlorine with respect to the semiconductor substrate and the oxide film in the first region. |
