| 摘要 |
A semiconductor memory device including a plurality of memory die and a controller die. The controller die is connected to an internal control bus. The controller die is configured to provide to a selected one of the memory die an internal read command responsive to an external read command. The selected memory die is configured to provide read data to the controller in response to the internal read command; wherein latency between receipt by the controller die of the external read command and receipt of the read data from the selected memory die differs for at least two of the memory die when selected as the selected memory die. |
