发明名称 |
Bi-section semiconductor laser device, method for manufacturing the same, and method for driving the same |
摘要 |
A method for manufacturing a bi-section semiconductor laser device includes the steps of (A) forming a stacked structure obtained by stacking, on a substrate in sequence, a first compound semiconductor layer of a first conductivity type, a compound semiconductor layer that constitutes a light-emitting region and a saturable absorption region, and a second compound semiconductor layer of a second conductivity type; (B) forming a belt-shaped second electrode on the second compound semiconductor layer; (C) forming a ridge structure by etching at least part of the second compound semiconductor layer using the second electrode as an etching mask; and (D) forming a resist layer for forming a separating groove in the second electrode and then forming the separating groove in the second electrode by wet etching so that the separating groove separates the second electrode into a first portion and a second portion. |
申请公布号 |
US8329483(B2) |
申请公布日期 |
2012.12.11 |
申请号 |
US20100726524 |
申请日期 |
2010.03.18 |
申请人 |
WATANABE HIDEKI;MIYAJIMA TAKAO;IKEDA MASAO;YOKOYAMA HIROYUKI;OKI TOMOYUKI;KURAMOTO MASARU;SONY CORPORATION;TOHOKU UNIVERSITY |
发明人 |
WATANABE HIDEKI;MIYAJIMA TAKAO;IKEDA MASAO;YOKOYAMA HIROYUKI;OKI TOMOYUKI;KURAMOTO MASARU |
分类号 |
H01L21/00 |
主分类号 |
H01L21/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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