发明名称 Damascene process for use in fabricating semiconductor structures having micro/nano gaps
摘要 In fabricating a microelectromechanical structure (MEMS), a method of forming a narrow gap in the MEMS includes a) depositing a layer of sacrificial material on the surface of a supporting substrate, b) photoresist masking and at least partially etching the sacrificial material to form at least one blade of sacrificial material, c) depositing a structural layer over the sacrificial layer, and d) removing the sacrificial layer including the blade of the sacrificial material with a narrow gap remaining in the structural layer where the blade of sacrificial material was removed.
申请公布号 US8329559(B2) 申请公布日期 2012.12.11
申请号 US20070737545 申请日期 2007.04.19
申请人 TAKEUCHI HIDEKI;QUEVY EMMANUEL P.;KING TSU-JAE;HOWE ROGER T.;THE REGENTS OF THE UNIVERSITY OF CALIFORNIA 发明人 TAKEUCHI HIDEKI;QUEVY EMMANUEL P.;KING TSU-JAE;HOWE ROGER T.
分类号 H01L21/46;H01L21/00;H01L21/301;H01L21/78 主分类号 H01L21/46
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