发明名称 |
Damascene process for use in fabricating semiconductor structures having micro/nano gaps |
摘要 |
In fabricating a microelectromechanical structure (MEMS), a method of forming a narrow gap in the MEMS includes a) depositing a layer of sacrificial material on the surface of a supporting substrate, b) photoresist masking and at least partially etching the sacrificial material to form at least one blade of sacrificial material, c) depositing a structural layer over the sacrificial layer, and d) removing the sacrificial layer including the blade of the sacrificial material with a narrow gap remaining in the structural layer where the blade of sacrificial material was removed.
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申请公布号 |
US8329559(B2) |
申请公布日期 |
2012.12.11 |
申请号 |
US20070737545 |
申请日期 |
2007.04.19 |
申请人 |
TAKEUCHI HIDEKI;QUEVY EMMANUEL P.;KING TSU-JAE;HOWE ROGER T.;THE REGENTS OF THE UNIVERSITY OF CALIFORNIA |
发明人 |
TAKEUCHI HIDEKI;QUEVY EMMANUEL P.;KING TSU-JAE;HOWE ROGER T. |
分类号 |
H01L21/46;H01L21/00;H01L21/301;H01L21/78 |
主分类号 |
H01L21/46 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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