| 摘要 |
<p>PURPOSE: A phase change memory device and a manufacturing method thereof are provided to improve reliability of the phase change memory device by laminating a first substance film and a second material layer. CONSTITUTION: Provided is a semiconductor substrate(210) on which a word line is formed. A phase change memory cell is formed on the semiconductor substrate. An insulating layer having a hole with a narrower diameter than that of a top layer of the phase change memory cell is formed. A first material is gap-filled so that the hole formed on the insulating layer is filled. The first material filled in the hole etches the first material in order to have a predetermined height and a first material film(271) is formed. A second material layer(272) is formed by filling a second material in the upper part of the first material film as high as the hole.</p> |
