发明名称 |
Phase-change random access memory devices with a phase-change nanowire having a single element |
摘要 |
A PRAM device includes a lower electrode, a phase-change nanowire and an upper electrode. The phase-change nanowire may be electrically connected to the lower electrode and includes a single element. The upper electrode may be electrically connected to the phase-change nanowires.
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申请公布号 |
US8330226(B2) |
申请公布日期 |
2012.12.11 |
申请号 |
US201213455297 |
申请日期 |
2012.04.25 |
申请人 |
LEE TAE-YON;SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
LEE TAE-YON |
分类号 |
H01L29/76 |
主分类号 |
H01L29/76 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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