发明名称 Semiconductor device, mask for fabrication of semiconductor device, and optical proximity correction method
摘要 A semiconductor device includes a circuit portion including at least one real feature, and a plurality of dummy feature groups each including a plurality of dummy features spaced apart from each other by a first distance. The plurality of dummy feature groups are spaced apart from each other by a second distance larger than the first distance, and the circuit portion and the plurality of dummy feature groups are spaced apart from each other by the second distance.
申请公布号 US8330248(B2) 申请公布日期 2012.12.11
申请号 US201113014346 申请日期 2011.01.26
申请人 TABATA YASUKO;MISAKA AKIO;HIRAI TAKEHIRO;ARAI HIDEYUKI;NONAMI YUJI;PANASONIC CORPORATION 发明人 TABATA YASUKO;MISAKA AKIO;HIRAI TAKEHIRO;ARAI HIDEYUKI;NONAMI YUJI
分类号 G03F1/36;G03F1/68;G03F1/70 主分类号 G03F1/36
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