HIGH VOLTAGE LED AND METHOD FOR FABRICATING THEREOF

摘要

PURPOSE: A high voltage LED and a manufacturing method thereof are provided to simplify a manufacturing process by connecting cells with a transparent electrode. CONSTITUTION: An n-GaN(gallium nitride) layer(210), an active layer(220), a p-GaN(230) layer are successively formed on an Al2O3(Aluminium oxide) substrate(100). An insulating protection layer is deposited on a light emitting structure. A transparent electrode forms an electrode on the light emitting structure. The transparent electrode is deposited on the insulating protection layer in order to serially connect a plurality of light emitting structures. An n-pad electrode and a p-pad electrode are formed on a plurality of light emitting structures which are serially connected. [Reference numerals] (100) Al_2O_3 substrate; (200) Light emitting structure; (210) N-GaN layer; (220) Active layer; (230) P-GaN layer; (300) Insulating protection layer; (400) Transparent electrode; (510) N-pad electrode; (520) P-pad electrode