发明名称 Magneto-resistance effect element, magnetic head, magnetic recording/reproducing device and magnetic memory
摘要 A magneto-resistance effect element includes: a first magnetization layer of which a magnetization is substantially fixed in one direction; a second magnetization layer of which a magnetization is rotated in accordance with an external magnetic field; an intermediate layer which contains insulating portions and magnetic metallic portions and which is provided between the first magnetic layer and the second magnetic layer; and a pair of electrodes to flow current in a direction perpendicular to a film surface of a multilayered film made of the first magnetic layer, the intermediate layer and the second magnetic layer; wherein the magnetic metallic portions of the intermediate layer contain non-ferromagnetic metal.
申请公布号 US8331062(B2) 申请公布日期 2012.12.11
申请号 US201113291743 申请日期 2011.11.08
申请人 FUKE HIROMI;HASHIMOTO SUSUMU;TAKAGISHI MASAYUKI;IWASAKI HITOSHI;KABUSHIKI KAISHA TOSHIBA 发明人 FUKE HIROMI;HASHIMOTO SUSUMU;TAKAGISHI MASAYUKI;IWASAKI HITOSHI
分类号 G11B5/39;H01L23/12;H01L29/82 主分类号 G11B5/39
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