发明名称 METHOD AND SYSTEM FOR ION BEAM DELAYERING OF A SAMPLE AND CONTROL THEREOF
摘要 There is provided a method, system and computer program product to delayer a layer of a sample, the layer comprising one or more materials, in an ion beam mill by adjusting one or more operating parameters of the ion beam mill and selectively removing each of the one or more materials at their respective predetermined rates. There is also provided a method and system for obtaining rate of removal of a material from a sample in an ion beam mill.
申请公布号 CA2791249(A1) 申请公布日期 2012.12.11
申请号 CA20122791249 申请日期 2012.10.05
申请人 SEMICONDUCTOR INSIGHTS INC. 发明人 FOSTER, ROBERT K.;PAWLOWICZ, CHRISTOPHER;ABT, JASON;JONES, IAN;NENTWICH, HEINZ
分类号 G03F7/00;G01R31/303;H01J37/31 主分类号 G03F7/00
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