| 摘要 |
<P>PROBLEM TO BE SOLVED: To enable an FET composed of a nano-wire serving as a channel and a gate electrode formed around the nano-wire to be manufactured easily with high accuracy. <P>SOLUTION: In a gate electrode formation region of a substrate 121 having a sheathed nano-wire 103 disposed thereon, an upper gate electrode 124 overlying with a lower gate electrode 122 is formed across the sheathed nano-wire 103. Formation of the upper gate electrode 124 may be carried out by using known lithography technology and lift-off. For example, this can be achieved by forming, on the substrate 121 with the sheathed nano-wire 103 disposed thereon across the lower gate electrode 122, a resist pattern having an opening in an electrode formation part by an electron beam exposure and then depositing an electrode material on top of that. Then, by removing the resist pattern formed earlier, it is possible to form the upper gate electrode 124. <P>COPYRIGHT: (C)2013,JPO&INPIT |
