| 摘要 |
<p>PURPOSE: A manufacturing method for a CIGS(copper indium gallium diselenide) thin film having an uniform Ga distribution are provided to improve efficiency of a solar cell by minimizing a segregation phenomenon in the CIGS thin film. CONSTITUTION: A Cu-In-Ga-Se precursor thin film including a selenide compound having a covalent bond structure is formed on a substrate. The precursor thin film is heat-treated in selenization. A formation method of the precursor thin film is a deposition method by a sputtering method or a thermal evaporation. The sputtering method is performed by containing a target including selenium.</p> |
