发明名称 THIN FILM SOLAR CELL SUBSTRATE AND MANUFACTURING METHOD THEREOF AND THIN FILM SOLAR CELL
摘要 <P>PROBLEM TO BE SOLVED: To provide a thin film solar cell substrate in which a transparent conductive film having a low sheet resistance value, few light absorption, and gentle and uniform irregularities formed on the surface is formed under conditions where the substrate temperature is 300&deg;C or less. <P>SOLUTION: A thin film solar cell substrate includes a transparent conductive film of a double layer structure consisting of a first layer and a second layer respectively composed mainly of zinc oxide and containing at least one of Al and Ga as a dopant, which are formed on a glass substrate in that order. On the surface of the transparent conductive film of the double layer structure, irregularities are formed by etching with an acid or alkali solution. Assuming that the substrate temperatures at the time of formation of the first layer and the second layer respectively are T<SB POS="POST">1</SB>and T<SB POS="POST">2</SB>, the relationships 230&deg;C&le;T<SB POS="POST">1</SB>and T<SB POS="POST">2</SB>&le;300&deg;C are satisfied. The first layer is 3.4 to 7.0 at% in a dopant content defined as an atom ratio of the total amount of Al and Ga to the sum total of Zn, Al and Ga and is 50 to 200 nm in film thickness, while the second layer is 0.3 to 1.0 at% in a dopant content defined as an atom ratio of the total amount of Al and Ga to the sum total of Zn, Al and Ga and is 700 to 1500 nm in film thickness. As for the transparent conductive film, a peak ratio of the peak on (002) plane to the peak on (101) plane of a ZnO crystal measured by an X-ray diffraction device (i.e., peak on (002) plane/peak on (101) plane) is 400-fold or more. <P>COPYRIGHT: (C)2013,JPO&INPIT
申请公布号 JP2012244029(A) 申请公布日期 2012.12.10
申请号 JP20110114431 申请日期 2011.05.23
申请人 ASAHI GLASS CO LTD 发明人 AOSHIMA ARINORI;MITSUI AKIRA
分类号 H01L31/04 主分类号 H01L31/04
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