| 摘要 |
<P>PROBLEM TO BE SOLVED: To improve yield by preventing occurrence of defocusing. <P>SOLUTION: A first thin film 21A is formed on a surface of a semiconductor substrate 34. A second thin film 21B is formed on a back surface of the semiconductor substrate 34. A protective film 20E is formed on the first thin film 21A. At least a part of the second thin film 21B is removed by CMP using the protective film 20E. <P>COPYRIGHT: (C)2013,JPO&INPIT |
