| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide an organic thin-film transistor comprising an organic semiconductor layer subjected to high-definition patterning and a method of manufacturing the same, without the need to separately perform precise control of a position in which the organic semiconductor layer is formed. <P>SOLUTION: There is provided an organic thin-film transistor comprising: a source electrode 1, a drain electrode 2, a gate electrode 3, an organic semiconductor layer 4, and a gate insulating film 5. Both of the source electrode 1 and the drain electrode 2 have surface energy of 30 mN/m or less. <P>COPYRIGHT: (C)2013,JPO&INPIT |
