SEMICONDUCTOR DEVICE, SEMICONDUCTOR PACKAGE AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD

摘要

PROBLEM TO BE SOLVED: To provide a highly reliable semiconductor device.

SOLUTION: A semiconductor device comprises: an N-type substrate 10; a P-type well 40 provided on one surface side of the N-type substrate 10; a P-type high concentration impurity region 42 provided in the P-type well 40; a MOS transistor 20 including an N-type source-drain region provided in the P-type well 40; and a MOS transistor 30 provided on the one surface side of the N-type substrate 10 and including a source-drain region electrically connected with the P-type high concentration impurity region 42 on one side and grounded on another side.

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