发明名称 SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE, RECORDING MEDIUM STORED WITH CELL LIBRARY, AND METHOD FOR DESIGNING SEMICONDUCTOR INTEGRATED CIRCUIT
摘要 A semiconductor integrated circuit device comprises a MOSFET. The operating speed is suitably harmonized with the increase of the power consumption by the leak current of the MOSFET. Along signal paths, of the signal paths in the semiconductor integrated circuit device, having margins for delay of signals propagated through the paths, MOSFETs having high threshold voltages are provided, and along signal paths having no margin for delay of signals propagated through the paths, MOSFETs having a low threshold voltage, a large leak current and a high operating speed are provided.
申请公布号 WO9934512(A1) 申请公布日期 1999.07.08
申请号 WO1998JP05688 申请日期 1998.12.16
申请人 HITACHI, LTD.;KATOH, NAOKI;YANO, KAZUO;AKITA, YOHEI;HIRAKI, MITSURU 发明人 KATOH, NAOKI;YANO, KAZUO;AKITA, YOHEI;HIRAKI, MITSURU
分类号 G06F17/50;H01L21/822;H01L27/04;H03K19/00;H03K19/0944;H03K19/173;(IPC1-7):H03K19/094 主分类号 G06F17/50
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