发明名称 |
SILICON CARBIDE POWDER AND METHOD FOR PRODUCING SILICON CARBIDE |
摘要 |
<P>PROBLEM TO BE SOLVED: To provide silicon carbide powder which can be produced more easily and contains high purity silicon carbide and a method for producing the silicon carbide powder. <P>SOLUTION: The silicon carbide powder for growing a silicon carbide crystal is formed by heating the mixture of silicon pieces and carbon powder and pulverizing the heated mixture. The silicon carbide powder substantially constituted of silicon carbide and the method for producing the silicon carbide powder are disclosed. <P>COPYRIGHT: (C)2013,JPO&INPIT |
申请公布号 |
JP2012240869(A) |
申请公布日期 |
2012.12.10 |
申请号 |
JP20110110959 |
申请日期 |
2011.05.18 |
申请人 |
SUMITOMO ELECTRIC IND LTD |
发明人 |
SASAKI MAKOTO;INOUE HIROKI |
分类号 |
C01B31/36;C30B29/36 |
主分类号 |
C01B31/36 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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