发明名称 |
METHOD FOR MANUFACTURING PIEZOELECTRIC FILM ELEMENT |
摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method for manufacturing a piezoelectric film element capable of microfabricating a piezoelectric film layer in a short time by wet etching and selectively stopping microfabrication in a lower electrode layer. <P>SOLUTION: A method for manufacturing a piezoelectric film element 1 comprises the steps of: forming a lower electrode 3 on a substrate 2; forming a piezoelectric film layer 4 of alkali niobium oxide-based perovskite structure represented by formula (K<SB POS="POST">1-x</SB>Na<SB POS="POST">x</SB>)NbO<SB POS="POST">3</SB>on the lower electrode 3; and wet-etching the piezoelectric film layer 4. The wet-etching step uses a hydrofluoric acid-based etching liquid using a Cr film 6 as a mask. <P>COPYRIGHT: (C)2013,JPO&INPIT |
申请公布号 |
JP2012244090(A) |
申请公布日期 |
2012.12.10 |
申请号 |
JP20110115556 |
申请日期 |
2011.05.24 |
申请人 |
HITACHI CABLE LTD |
发明人 |
HORIKIRI FUMIMASA;SHIBATA KENJI;SUENAGA KAZUFUMI;WATANABE KAZUTOSHI;NOMOTO AKIRA |
分类号 |
H01L41/24;H01L41/18;H01L41/187 |
主分类号 |
H01L41/24 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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