METHOD TO IMPROVE ADHESION FOR A SILVER FILLED OXIDE VIA FOR A NON-VOLATILE MEMORY DEVICE

摘要

A method for forming an interconnect structure for a memory device. The method includes providing a partially fabricated device. The partially fabricated device includes a switching element overlying a first wiring structure. A thickness of dielectric material is deposited overlying the first wiring structure. The method deposits an adhesion material overlying the thickness of the dielectric material. A via opening is formed in a portion of the thickness of the dielectric material to expose a surface region of the switching element while the adhesion material is maintained overlying the dielectric material. A second wiring material is deposited overlying the thickness of the dielectric material and to fill at least part of the via opening and forming a thickness of second wiring material overlying the adhesion material. The adhesion material maintains the second wiring material to be adhered to the surface region of the thickness of the dielectric material.