| 摘要 |
A method including forming an insulation layer over a semiconductor substrate; burying a first conduction layer containing Cu in the insulation layer in a first region and burying an interconnection containing Cu in the insulation layer in a second region; forming a barrier film of a conductive material; forming a dielectric film over the barrier metal film; forming a second conduction layer over the dielectric film; patterning the second conduction layer to form an upper electrode formed of the second conduction layer in the first region; and patterning the dielectric film and the barrier metal film to cover an upper surface of the first conduction layer by the first barrier film formed of the barrier metal film, form a lower electrode including the first conduction layer and the first barrier film, and covering an upper surface of the interconnection by the second barrier film formed of the barrier metal film. |
