发明名称 |
VERTICAL JUNCTION FIELD EFFECT TRANSISTOR WITH MESA TERMINATION AND METHOD OF MAKING THE SAME |
摘要 |
A vertical junction field effect transistor (VJFET) having a mesa termination and a method of making the device are described. The device includes: an n-type mesa on an n-type substrate; a plurality of raised n-type regions on the mesa comprising an upper n-type layer on a lower n-type layer; p-type regions between and adjacent the raised n-type regions and along a lower sidewall portion of the raised regions; dielectric material on the sidewalls of the raised regions, on the p-type regions and on the sidewalls of the mesa; and electrical contacts to the substrate (drain), p-type regions (gate) and the upper n-type layer (source). The device can be made in a wide-bandgap semiconductor material such as SiC. The method includes selectively etching through an n-type layer using a mask to form the raised regions and implanting p-type dopants into exposed surfaces of an underlying n-type layer using the mask. |
申请公布号 |
US2012309154(A1) |
申请公布日期 |
2012.12.06 |
申请号 |
US201213587151 |
申请日期 |
2012.08.16 |
申请人 |
SANKIN IGOR;MERRETT JOSEPH NEIL;SS SC IP, LLC |
发明人 |
SANKIN IGOR;MERRETT JOSEPH NEIL |
分类号 |
H01L21/336 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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