发明名称 |
METHOD FOR PRODUCING GROUP-III NITRIDE SEMICONDUCTOR CRYSTAL, GROUP-III NITRIDE SEMICONDUCTOR SUBSTRATE, AND SEMICONDUCTOR LIGHT EMITTING DEVICE |
摘要 |
The method for producing a group III nitride semiconductor crystal comprises preparing a seed crystal having a non-polar plane followed by growing a group III nitride semiconductor from the non-polar plane in a vapor phase, wherein the growing includes growing the group III nitride semiconductor so as to extend in the +C-axis direction of the seed crystal. A group III-V nitride semiconductor crystal having high quality and a large-area non-polar plane can be obtained by the method. |
申请公布号 |
US2012305983(A1) |
申请公布日期 |
2012.12.06 |
申请号 |
US201213571782 |
申请日期 |
2012.08.10 |
申请人 |
FUJITO KENJI;KIYOMI KAZUMASA;MITSUBISHI CHEMICAL CORPORATION |
发明人 |
FUJITO KENJI;KIYOMI KAZUMASA |
分类号 |
C30B25/18;C30B23/02;C30B25/02;H01L29/20;H01L33/16;H01L33/32 |
主分类号 |
C30B25/18 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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