发明名称 |
CMP POLISHING FLUID, METHOD FOR MANUFACTURING THE SAME, METHOD FOR MANUFACTURING COMPOSITE PARTICLE, AND METHOD FOR POLISHING BASE MATERIAL |
摘要 |
<P>PROBLEM TO BE SOLVED: To provide a CMP polishing fluid which can improve polishing speed for an insulator film. <P>SOLUTION: This CMP polishing fluid contains water and abrasive particles. The abrasive particles contain composite particles having a core, which includes a first particle, and a second particle provided on that core. The first particle contains silica, and the second particle contains cerium hydroxide. The pH of the CMP polishing fluid is 9.5 or less. <P>COPYRIGHT: (C)2013,JPO&INPIT |
申请公布号 |
JP2012238831(A) |
申请公布日期 |
2012.12.06 |
申请号 |
JP20120010018 |
申请日期 |
2012.01.20 |
申请人 |
HITACHI CHEM CO LTD |
发明人 |
MINAMI HISATAKA;NOMURA YUTAKA;IWANO TOMOHIRO;INOUE KEISUKE;YOSHIKAWA TOMOSATO |
分类号 |
H01L21/304;B24B37/00;C09K3/14 |
主分类号 |
H01L21/304 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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