发明名称 CMP POLISHING FLUID, METHOD FOR MANUFACTURING THE SAME, METHOD FOR MANUFACTURING COMPOSITE PARTICLE, AND METHOD FOR POLISHING BASE MATERIAL
摘要 <P>PROBLEM TO BE SOLVED: To provide a CMP polishing fluid which can improve polishing speed for an insulator film. <P>SOLUTION: This CMP polishing fluid contains water and abrasive particles. The abrasive particles contain composite particles having a core, which includes a first particle, and a second particle provided on that core. The first particle contains silica, and the second particle contains cerium hydroxide. The pH of the CMP polishing fluid is 9.5 or less. <P>COPYRIGHT: (C)2013,JPO&INPIT
申请公布号 JP2012238831(A) 申请公布日期 2012.12.06
申请号 JP20120010018 申请日期 2012.01.20
申请人 HITACHI CHEM CO LTD 发明人 MINAMI HISATAKA;NOMURA YUTAKA;IWANO TOMOHIRO;INOUE KEISUKE;YOSHIKAWA TOMOSATO
分类号 H01L21/304;B24B37/00;C09K3/14 主分类号 H01L21/304
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