发明名称 METHODS OF OPERATING NON-VOLATILE MEMORY DEVICES DURING WRITE OPERATION INTERRUPTION, NON-VOLATILE MEMORY DEVICES, MEMORIES AND ELECTRONIC SYSTEMS OPERATING THE SAME
摘要 A non-volatile memory device may operate by writing a portion of a new codeword to an address in the device that stores an old codeword, as part of a write operation. An interruption of the write operation can be detected before completion, which indicates that the address stores the portion of the new codeword and a portion of the old codeword. The portion of the old codeword can be combined with the portion of the new codeword to provide an updated codeword. Error correction bits can be generated using the updated codeword and the error correction bits can be written to the address.
申请公布号 US2012311407(A1) 申请公布日期 2012.12.06
申请号 US201113193191 申请日期 2011.07.28
申请人 LEE KWANG JIN;LEE YEONG TAEK;CHO WOO YEONG;CHUNG HOI JU;SAMSUNG ELECTRONICS CO., LTD. 发明人 LEE KWANG JIN;LEE YEONG TAEK;CHO WOO YEONG;CHUNG HOI JU
分类号 H03M13/05;G06F11/10 主分类号 H03M13/05
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