METHOD OF MANUFACTURING CIGS THIN FILM WITH UNIFORM Ga DISTRIBUTION

摘要

A method of manufacturing a CIGS thin film with a uniform Ga distribution and a method of manufacturing a solar cell using the method are provided. The method of manufacturing a CIGS thin film with a uniform Ga distribution includes: (a) forming a Cu-In-Ga-Se precursor thin film comprising a seleni de-based compound having a covalently-bonded structure on a substrate; and (b) selenizing the precursor thin film formed in step (a). Accordingly, it is possible to uniformize the Ga distribution in a CIGS thin film and thus to enhance the efficiency of a solar cell having the CIGS thin film, by changing the sputtering precursor to a seleni de-based compound instead of pure metal or alloy to suppress the segregation of Ga in the thermal process in the Se atmosphere.