发明名称 MANUFACTURING METHODS OF PIEZOELECTRIC FILM ELEMENT AND PIEZOELECTRIC DEVICE
摘要 A manufacturing method of a piezoelectric film element includes forming a lower electrode on a substrate, forming a piezoelectric film including a lead-free alkali niobate based compound having a perovskite structure on the lower electrode, forming a mask pattern on the piezoelectric film, dry-etching the piezoelectric film via the mask pattern, removing the mask pattern after the dry etching, and heat-treating the piezoelectric film in an oxidizing atmosphere. A manufacturing method of a piezoelectric device includes forming an upper electrode on the piezoelectric film of the piezoelectric film element formed by the manufacturing method of the piezoelectric film element, and connecting an electric voltage applying means or an electric voltage detecting means to the lower electrode and the upper electrode.
申请公布号 US2012304429(A1) 申请公布日期 2012.12.06
申请号 US201213488230 申请日期 2012.06.04
申请人 HORIKIRI FUMIMASA;SHIBATA KENJI;SUENAGA KAZUFUMI;WATANABE KAZUTOSHI;NOMOTO AKIRA;HITACHI CABLE, LTD. 发明人 HORIKIRI FUMIMASA;SHIBATA KENJI;SUENAGA KAZUFUMI;WATANABE KAZUTOSHI;NOMOTO AKIRA
分类号 H01L41/22 主分类号 H01L41/22
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