| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a photoelectric conversion device capable of having good photoelectric conversion efficiency by improving conductivity of an interlayer in a laminated type photoelectric conversion device. <P>SOLUTION: An interlayer 5 is arranged between a first photoelectric conversion layer 4 having a first p-type semiconductor layer 4a and a first n-type semiconductor layer 4d and a second photoelectric conversion layer 6 having a second p-type semiconductor layer 6d and a second n-type semiconductor layer 6c. The interlayer 5 comprises an n-type transparent conductive oxide film 5a and a p-type transparent conductive oxide film 5b having a band-gap of 1.5 eV or more, the n-type transparent conductive oxide film 5a is arranged in contact with the first n-type semiconductor layer 4d, and the p-type transparent conductive oxide film 5b is arranged in contact with the second p-type semiconductor layer 6d. A width of a low carrier concentration region having a concentration of free carrier formed near at least one interface of an interface where the p-type transparent conductive oxide film 5b comes into contact with the n-type transparent conductive oxide film 5a and an interface where the p-type transparent conductive oxide film 5b comes into contact with the second p-type semiconductor layer 6d, of equal to or less than 1×10<SP POS="POST">18</SP>cm<SP POS="POST">-3</SP>in a film thickness direction, is equal to or less than 5 nm. <P>COPYRIGHT: (C)2013,JPO&INPIT |
